Quantum dots for single and entangled photon emitters
Identifieur interne : 000097 ( Russie/Analysis ); précédent : 000096; suivant : 000098Quantum dots for single and entangled photon emitters
Auteurs : RBID : Pascal:11-0031979Descripteurs français
- Pascal (Inist)
- Distribution quantique clé, Etat intriqué, Exciton, Photoluminescence, Source photon unique, Communication quantique, Fonction corrélation, Composé binaire, Indium Arséniure, Semiconducteur III-V, Résolution spectrale, Point quantique, Nanomatériau, Implémentation, Autoorganisation, Point quantique semiconducteur, Technologie semiconducteur, Composé III-V, Ouverture optique, InAs, GaAs, As In, As Ga, 0130C, 8107T, 8107B, 6146, 8565, 0367H, 7135, 7867, 8535B, Paire photons, Photon unique.
English descriptors
- KwdEn :
- Aperture, Binary compounds, Correlation functions, Entangled states, Excitons, III-V compound, III-V semiconductors, Implementation, Indium Arsenides, Nanostructured materials, Photoluminescence, Photon pair, Quantum communication, Quantum dots, Quantum key distribution, Self organization, Semiconductor quantum dots, Semiconductor technology, Single photon, Single photon source, Spectral resolution.
Abstract
Efficient generation of polarized single or entangled photons is a crucial requirement for the implementation of quantum key distribution (QKD) systems. Self-organized semiconductor quantum dots (QDs) are capable of emitting one polarized photon or an entangled photon pair at a time using appropriate electrical current injection. We realized highly efficient single photon sources (SPS) based on well established semiconductor technology: In a pin structure a single electron and a single hole are funneled into a single InAs quantum dot using a submicron AlOx current aperture. Efficient radiative recombination leads to emission of single polarized photons with an all-time record purity of the spectrum. Non-classicality of the emitted light without using additional spectral filtering is demonstrated. Out-coupling efficiency and emission rate are increased by embedding the SPS into a micro-cavity of Q = 140. The design of the micro-cavity is based on detailed modeling to optimize its performance. The resulting resonant single-QD diode generates single polarized photons at a repetition rate of 1 GHz exhibiting a second order correlation function of g (2)(0) = 0. Eventually, QDs grown on (111) oriented substrate are proposed as source of entangled photon pairs. Intrinsic symmetry-lowering effects leading to the splitting of the exciton bright states are shown to be absent for this substrate orientation. As a result the XX → X → 0 recombination cascade of a QD can be used for the generation of entangled photons without further tuning of the finestructure splitting via QD size and/or shape. We present first micro-photoluminescence studies on QDs grown on (111) GaAs, demonstrating a fine structure splitting less than the spectral resolution of our set-up.
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Stock</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>TU-Berlin, Hardenbergstr. 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Lochmann, A" uniqKey="Lochmann A">A. Lochmann</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>TU-Berlin, Hardenbergstr. 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Schliwa, A" uniqKey="Schliwa A">A. 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M Nnix</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>TU-Berlin, Hardenbergstr. 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Rodt, S" uniqKey="Rodt S">S. Rodt</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>TU-Berlin, Hardenbergstr. 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Toropov, A I" uniqKey="Toropov A">A. I. Toropov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Semiconductor Physics, Lavrenteva av 13</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk 630090</wicri:noRegion></affiliation></author><author><name sortKey="Bakarov, A" uniqKey="Bakarov A">A. Bakarov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Semiconductor Physics, Lavrenteva av 13</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk 630090</wicri:noRegion></affiliation></author><author><name sortKey="Kalagin, A K" uniqKey="Kalagin A">A. K. Kalagin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Semiconductor Physics, Lavrenteva av 13</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk 630090</wicri:noRegion></affiliation></author><author><name sortKey="Haisler, V A" uniqKey="Haisler V">V. A. Haisler</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Semiconductor Physics, Lavrenteva av 13</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk 630090</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0031979</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 11-0031979 INIST</idno><idno type="RBID">Pascal:11-0031979</idno><idno type="wicri:Area/Main/Corpus">003825</idno><idno type="wicri:Area/Main/Repository">003A31</idno><idno type="wicri:Area/Russie/Extraction">000097</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aperture</term><term>Binary compounds</term><term>Correlation functions</term><term>Entangled states</term><term>Excitons</term><term>III-V compound</term><term>III-V semiconductors</term><term>Implementation</term><term>Indium Arsenides</term><term>Nanostructured materials</term><term>Photoluminescence</term><term>Photon pair</term><term>Quantum communication</term><term>Quantum dots</term><term>Quantum key distribution</term><term>Self organization</term><term>Semiconductor quantum dots</term><term>Semiconductor technology</term><term>Single photon</term><term>Single photon source</term><term>Spectral resolution</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Distribution quantique clé</term><term>Etat intriqué</term><term>Exciton</term><term>Photoluminescence</term><term>Source photon unique</term><term>Communication quantique</term><term>Fonction corrélation</term><term>Composé binaire</term><term>Indium Arséniure</term><term>Semiconducteur III-V</term><term>Résolution spectrale</term><term>Point quantique</term><term>Nanomatériau</term><term>Implémentation</term><term>Autoorganisation</term><term>Point quantique semiconducteur</term><term>Technologie semiconducteur</term><term>Composé III-V</term><term>Ouverture optique</term><term>InAs</term><term>GaAs</term><term>As In</term><term>As Ga</term><term>0130C</term><term>8107T</term><term>8107B</term><term>6146</term><term>8565</term><term>0367H</term><term>7135</term><term>7867</term><term>8535B</term><term>Paire photons</term><term>Photon unique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Efficient generation of polarized single or entangled photons is a crucial requirement for the implementation of quantum key distribution (QKD) systems. Self-organized semiconductor quantum dots (QDs) are capable of emitting one polarized photon or an entangled photon pair at a time using appropriate electrical current injection. We realized highly efficient single photon sources (SPS) based on well established semiconductor technology: In a pin structure a single electron and a single hole are funneled into a single InAs quantum dot using a submicron AlOx current aperture. Efficient radiative recombination leads to emission of single polarized photons with an all-time record purity of the spectrum. Non-classicality of the emitted light without using additional spectral filtering is demonstrated. Out-coupling efficiency and emission rate are increased by embedding the SPS into a micro-cavity of Q = 140. The design of the micro-cavity is based on detailed modeling to optimize its performance. The resulting resonant single-QD diode generates single polarized photons at a repetition rate of 1 GHz exhibiting a second order correlation function of g <sup>(2)</sup>(0) = 0. Eventually, QDs grown on (111) oriented substrate are proposed as source of entangled photon pairs. Intrinsic symmetry-lowering effects leading to the splitting of the exciton bright states are shown to be absent for this substrate orientation. As a result the XX → X → 0 recombination cascade of a QD can be used for the generation of entangled photons without further tuning of the finestructure splitting via QD size and/or shape. We present first micro-photoluminescence studies on QDs grown on (111) GaAs, demonstrating a fine structure splitting less than the spectral resolution of our set-up.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7610</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Quantum dots for single and entangled photon emitters</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Quantum dots and nanostructures : synthesis, characterization, and modeling VII</s1></fA09><fA11 i1="01" i2="1"><s1>BIMBERG (D.)</s1></fA11><fA11 i1="02" i2="1"><s1>STOCK (E.)</s1></fA11><fA11 i1="03" i2="1"><s1>LOCHMANN (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>SCHLIWA (A.)</s1></fA11><fA11 i1="05" i2="1"><s1>UNRAU (W.)</s1></fA11><fA11 i1="06" i2="1"><s1>MÜNNIX (M.)</s1></fA11><fA11 i1="07" i2="1"><s1>RODT (S.)</s1></fA11><fA11 i1="08" i2="1"><s1>TOROPOV (A. I.)</s1></fA11><fA11 i1="09" i2="1"><s1>BAKAROV (A.)</s1></fA11><fA11 i1="10" i2="1"><s1>KALAGIN (A. K.)</s1></fA11><fA11 i1="11" i2="1"><s1>HAISLER (V. A.)</s1></fA11><fA12 i1="01" i2="1"><s1>EYINK (Kurt Gerard)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SZMULOWICZ (Frank)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>HUFFAKER (Diana Lynne)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>TU-Berlin, Hardenbergstr. 36</s1><s2>10623 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Semiconductor Physics, Lavrenteva av 13</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>76100G.1-76100G.13</s2></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham, Wash.</s2></fA25><fA26 i1="01"><s0>978-0-8194-8006-4</s0></fA26><fA26 i1="02"><s0>0-8194-8006-1</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174695790020</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>49 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0031979</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Efficient generation of polarized single or entangled photons is a crucial requirement for the implementation of quantum key distribution (QKD) systems. Self-organized semiconductor quantum dots (QDs) are capable of emitting one polarized photon or an entangled photon pair at a time using appropriate electrical current injection. We realized highly efficient single photon sources (SPS) based on well established semiconductor technology: In a pin structure a single electron and a single hole are funneled into a single InAs quantum dot using a submicron AlOx current aperture. Efficient radiative recombination leads to emission of single polarized photons with an all-time record purity of the spectrum. Non-classicality of the emitted light without using additional spectral filtering is demonstrated. Out-coupling efficiency and emission rate are increased by embedding the SPS into a micro-cavity of Q = 140. The design of the micro-cavity is based on detailed modeling to optimize its performance. The resulting resonant single-QD diode generates single polarized photons at a repetition rate of 1 GHz exhibiting a second order correlation function of g <sup>(2)</sup>(0) = 0. Eventually, QDs grown on (111) oriented substrate are proposed as source of entangled photon pairs. Intrinsic symmetry-lowering effects leading to the splitting of the exciton bright states are shown to be absent for this substrate orientation. As a result the XX → X → 0 recombination cascade of a QD can be used for the generation of entangled photons without further tuning of the finestructure splitting via QD size and/or shape. We present first micro-photoluminescence studies on QDs grown on (111) GaAs, demonstrating a fine structure splitting less than the spectral resolution of our set-up.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00A30C</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07T</s0></fC02><fC02 i1="03" i2="3"><s0>001B00C67H</s0></fC02><fC02 i1="04" i2="3"><s0>001B70A35</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Distribution quantique clé</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Quantum key distribution</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Etat intriqué</s0><s5>04</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Entangled states</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Exciton</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Excitons</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Source photon unique</s0><s5>11</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Single photon source</s0><s5>11</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Communication quantique</s0><s5>17</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Quantum communication</s0><s5>17</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Fonction corrélation</s0><s5>23</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Correlation functions</s0><s5>23</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Composé binaire</s0><s5>50</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Binary compounds</s0><s5>50</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>52</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>52</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Résolution spectrale</s0><s5>61</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Spectral resolution</s0><s5>61</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Point quantique</s0><s5>62</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Quantum dots</s0><s5>62</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>63</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>63</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Implémentation</s0><s5>64</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Implementation</s0><s5>64</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Autoorganisation</s0><s5>65</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Self organization</s0><s5>65</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Autoorganización</s0><s5>65</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0><s5>66</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0><s5>66</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Technologie semiconducteur</s0><s5>67</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Semiconductor technology</s0><s5>67</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Composé III-V</s0><s5>68</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>III-V compound</s0><s5>68</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>68</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Ouverture optique</s0><s5>69</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Aperture</s0><s5>69</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Abertura óptica</s0><s5>69</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>As Ga</s0><s4>INC</s4><s5>76</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>0130C</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8107T</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>8107B</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>6146</s0><s4>INC</s4><s5>86</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>8565</s0><s4>INC</s4><s5>87</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>0367H</s0><s4>INC</s4><s5>91</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>7135</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>7867</s0><s4>INC</s4><s5>93</s5></fC03><fC03 i1="32" i2="3" l="FRE"><s0>8535B</s0><s4>INC</s4><s5>94</s5></fC03><fC03 i1="33" i2="3" l="FRE"><s0>Paire photons</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="33" i2="3" l="ENG"><s0>Photon pair</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="34" i2="3" l="FRE"><s0>Photon unique</s0><s4>CD</s4><s5>97</s5></fC03><fC03 i1="34" i2="3" l="ENG"><s0>Single photon</s0><s4>CD</s4><s5>97</s5></fC03><fN21><s1>024</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Quantum dots and nanostructures</s1><s2>07</s2><s3>San Francisco CA USA</s3><s4>2010</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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